unisonic technologies co., ltd 12p10 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2008 unisonic technologies co., ltd qw-r502-262.a 100v p-channel mosfet ? description the 12p10 uses advanced proprietary, planar stripe, dmos technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching dc/dc converters, and dc motor control. ? features * r ds(on) = 0.29 ? @v gs = -10 v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain lead-free: 12p10l halogen-free: 12p10g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing 12P10-TN3-R 12p10l-tn3-r 12p10g-tn3-r to-252 g d s tape reel 12p10-tq2-r 12p10l-tq2-r 12p10g-tq2-r to-263 g d s tape reel 12p10-tq2-t 12p10l-tq2-t 12p10g-tq2-t to-263 g d s tube
12p10 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-262.a ? absolute maximum ratings (t c =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -100 v gate-source voltage v gss 30 v continuous drain current i d -9.4 a pulsed drain current (note 2) i dm -37.6 a avalanche current (note 2) i ar -9.4 a single pulsed avalanche energy (note 3) e as 370 mj repetitive avalanche energy (note 2) e ar 5.0 mj peak diode recovery dv/dt (note 4) dv/dt -6.0 v/ns to-252 50 power dissipation to-263 p d 65 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: 1. 2. 3. 4. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) l=6.3mh, i as =-9.4a, v dd =-25v, r g =25 ? , starting t j =25c i sd -11.5a, di/dt 300 a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol min typ max unit to-252 110 junction-to-ambient to-263 ja 62.5 /w to-252 2.5 junction-to-case to-263 jc 2.31 /w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250a -100 v breakdown voltage temperature coefficient bv dss / t j i d =-250a, referenced to 25c -0.1 v/c drain-source leakage current i dss v ds =-100v, v gs =0v -1 a gate-source leakage current i gss v ds =0v, v gs =30v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250a -2.0 -4.0 v static drain-source on-resistance r ds(on) v gs =-10v, i d =-4.7a 0.24 0.29 ? forward transconductance g fs v ds =-40v, i d =-4.7a (note 1) 6.3 s dynamic parameters input capacitance c iss 620 800 pf output capacitance c oss 220 290 pf reverse transfer capacitance c rss v ds =-25v, v gs =0v, f=1.0mhz 65 85 pf switching parameters total gate charge q g 21 27 nc gate source charge q gs 4.6 nc gate drain charge q gd v ds =-80v, i d =-11.5a, v gs =-10v(note 1, 2) 11.5 nc turn-on delay time t d(on) 15 40 ns turn-on rise time t r 160 330 ns turn-off delay time t d(off) 35 80 ns turn-off fall-time t f v dd =-50v, i d =-11.5a, r g =25 ? (note 1, 2) 60 130 ns
12p10 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-262.a ? electrical characteristics (cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics diode forward voltage v sd v gs =0v, i s =-9.4a -4.0 v maximum body-diode continuous current i s -9.4 a maximum pulsed drain-source diode forward current i sm -37.6 a body diode reverse recovery time t rr 110 ns body diode reverse recovery charge q rr v gs =0v, i s =-11.5a, di f /dt=100a/s (note 1 ) 0.47 nc note: 1. pulse test : pulse width 300 s, duty cycle 2% note: 2. essentially independent of operating temperature
12p10 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-262.a ? test circuits and waveforms l v dd v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period compliment of d.u.t. (n-channel) fig. 1b peak diode recovery dv/dt waveforms
12p10 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-262.a ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r g -10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
12p10 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-262.a ? typical characteristics utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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